Fundamentals of Secondary Ion Mass Spectrometry
- 1 September 1987
- journal article
- Published by Springer Nature in MRS Bulletin
- Vol. 12 (6) , 40-47
- https://doi.org/10.1557/s088376940006721x
Abstract
This article presents an overview of our current understanding of the fundamental factors underlying Secondary Ion Mass Spectrometry (SIMS). Included is a discussion of the sputtering process and possible mechanisms which produce ejected ions. Presently available instrumentation for SIMS analysis is discussed and some examples of SIMS analysis are also given.Keywords
This publication has 24 references indexed in Scilit:
- Secondary ion mass spectroscopy analysis of moisture penetration of dielectric filmsJournal of Vacuum Science & Technology A, 1986
- Multitechnique depth profiling of small molecules in polymeric matrixesJournal of the American Chemical Society, 1984
- On mechanisms of sputtered ion emissionApplications of Surface Science, 1982
- Angular Distributions of Ejected Particles from Ion-Bombarded Clean and Reacted Single-Crystal SurfacesPhysical Review Letters, 1978
- Evaluation of a cesium positive ion source for secondary ion mass spectrometryAnalytical Chemistry, 1977
- Evaluation of a cesium primary ion source on an ion microprobe mass spectrometerAnalytical Chemistry, 1977
- Letter to the EditorRadiation Effects, 1977
- Anisotropic emission in single crystal sputtering measurements on HCP single crystalsRadiation Effects, 1973
- On a mechanism of secondary emission of polyatomic particlesJournal of Physics B: Atomic and Molecular Physics, 1971
- Excitation of Cu atoms by Ar ions and subsequent radiationless deexcitation of scattered particles near a Cu surfacePhysica, 1969