Dislocation climb and interstitial loop growth under cascade damage irradiation

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Abstract
The effects of intracascade clustering and recombination in radiation damage have been considered previously in semiquantitative calculations involving vacancy accumulation at voids, within the concept of production bias. To model void swelling and microstructural evolution quantitatively, similar effects on dislocation climb and interstitial loop growth have to be considered. In this regard, at elevated temperatures (such as in the peak-swelling temperature regime), the concentration of freely migrating vacancies is much higher than that of the interstitials, owing to the evaporation from the primary vacancy clusters (i.e. those produced by intracascade clustering). It is not immediately obvious how the dislocations can be net interstitial sinks, and hence that the observed nucleation and growth of the interstitial loops at elevated temperatures can be correctly predicted as in the conventional theory.