Extremely low threshold current, buried-heterostructure strained InGaAs-GaAs multiquantum well lasers

16 January 1992

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 28 (2) , 154-156
https://doi.org/10.1049/el:19920096

Abstract

A very low CW threshold current of l.65 mA at room temperature was obtained for an uncoated burie-dheterostructure strained layer multiquantum well InGaAs-GaAs laser fabricated using hybrid molecular beam epitaxy and liquid phase epitaxy crystal growth technique. External differential quantum efficiency as high as 446% (0.53 mW/mA) and output power of more than 30mW per facet were achieved in the same laser.

Keywords

30 MW
INGAAS-GAAS
44.6 PERCENT
ROOM TEMPERATURE
HYBRID MBE/LPE METHOD
BURIED-HETEROSTRUCTURE
DIFFERENTIAL QUANTUM EFFICIENCY
BH SEMICONDUCTOR LASER
FABRICATION
MULTIQUANTUM WELL
CRYSTAL GROWTH TECHNIQUE
CW THRESHOLD CURRENT
1.65 MA
LIQUID PHASE EPITAXY
MOLECULAR BEAM EPITAXY
LOW THRESHOLD CURRENT
STRAINED MQW LASERS

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