Electronic transport in hydrogenated amorphous silicon
- 1 April 1983
- journal article
- research article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 47 (4) , 377-392
- https://doi.org/10.1080/13642812.1983.10590676
Abstract
We discuss various mechanisms proposed to explain the deviation of d.c. conductivity σ(T) and thermopower S(T) from an activated law. We confirm the result obtained by Emin (1977) that the variation of the band-gap with temperature leads to a modification of the transport parameters in addition to that caused by the statistical shift of the Fermi level. We demonstrate that, independent of doping and of the deposition conditions, all samples prepared by glow-discharge decomposition of SiH4 exhibit a single transport mechanism, except for a possible hopping contribution.Keywords
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