Range of Secondary Eiectrons in Sapphiire
- 1 January 1970
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 17 (6) , 200-204
- https://doi.org/10.1109/TNS.1970.4325791
Abstract
During irradiation tests on a Czochralski-grown single-crystal sapphire sample, a trapping phenomenon was observed which led to an apparent nonlinear dependence of the radiation-induced conductivity on dose rate. These data have been interpreted in terms of a minimum projected range of the secondary electrons generated by the primary beam. A range of about 1000 Å is calculated.Keywords
This publication has 2 references indexed in Scilit:
- Theory of Transient Electrical Effects in Irradiated InsulatorsIEEE Transactions on Nuclear Science, 1966
- Cascade Capture of Electrons in SolidsPhysical Review B, 1960