Electron Relaxation Rates in Bismuth at Microwave and Far-Infrared Frequencies

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Abstract
Temperature- and frequency-dependent relaxation rates in bismuth have been measured by studies of the magnetic-field-dependent reflectivity of microwave and far-infrared radiation in single-crystal samples. Retardation effects have been taken into account in the analysis of the cyclotron resonance line shapes. The temperature and frequency dependence of the relaxation rates are analyzed in terms of the theory of electron-electron scattering and the experiment provides strong support for electron-electron dominated scattering in bismuth. The experimental results are inconsistent with an electron-phonon dominated scattering mechanism.