Growth of conductive copper sulfide thin films by atomic layer deposition
- 21 February 2002
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Journal of Materials Chemistry
- Vol. 12 (4) , 1022-1026
- https://doi.org/10.1039/b105901g
Abstract
Copper sulfide thin films were deposited on soda lime glass and Si(100) substrates by atomic layer deposition (ALD) using the β-diketonate-type volatile Cu compound Cu(thd)2 (thd = 2,2,6,6-tetramethyl-3,5-heptanedione) and H2S as precursors. Depositions were carried out in the temperature range 125–250 °C. The film growth was surface-controlled in the temperature ranges 125–140 °C and 125–160 °C on glass and silicon substrates, respectively, growth rate being approximately 0.3 Å cycle−1 on both substrates for films of a thickness above approximately 50 nm. For thinner films the growth rate was higher, approximately 0.5 Å cycle−1. The deposited CuxS thin films were characterized by X-ray diffraction (XRD), time-of-flight elastic recoil detection analysis (TOF-ERDA), atomic force microscopy (AFM) and four-point resistivity measurements to determine crystallinity, chemical composition and surface morphology as well as surface resistivity (1 × 10−4 Ω cm), respectively.Keywords
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