Creep and forming in selenium rectifiers
- 31 July 1960
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 1 (3) , 245-249
- https://doi.org/10.1016/0038-1101(60)90013-7
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Positive Current Creep in Selenium RectifiersProceedings of the Physical Society. Section B, 1952
- Application of the image-force model to the theory of contact rectification and of rectifier breakdownProceedings of the Royal Society of London. Series A. Mathematical and Physical Sciences, 1951
- A Study of Electrical Forming Phenomena at Selenium ContactsProceedings of the Physical Society. Section B, 1950
- On the Electric Formation of the Selenium RectifierJournal of the Physics Society Japan, 1950
- Der Einfluß von Thalliumspuren auf den SelengleichrichterThe European Physical Journal A, 1949
- On the Barrier Layer by the Contact between the Selenium Semiconductor and Metal. IIBulletin of the Chemical Society of Japan, 1949