Diffusion of Arsenic and Phosphorus in Laserprocessed-Polycrystalline-Silicon-Thin-Films
- 1 January 1981
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Grain boundary diffusion of arsenic and phosphorus in laser processed polycrystalline Si films has been investigated. Mesa diodes were fabricated in LPCVD Si thin films on SiO2 and subsequently recrystallized by cw Ar ion laser processing to form large grain material. The diffusion length of enhanced As and P diffusion along grain boundaries intersecting the p-n junction has been measured by the EBIC technique. Quantitative experimentation allowed determination of the grain boundary diffusion coefficients of As and P in the temperature range from 900°C to 1250°C.Keywords
This publication has 10 references indexed in Scilit:
- Effects of grain boundaries on laser crystallized poly-Si MOSFET'sIEEE Electron Device Letters, 1981
- Grain boundaries in p-n junction diodes fabricated in laser-recrystallized silicon thin filmsApplied Physics Letters, 1981
- Characteristics of MOSFETs fabricated in laser-recrystallized polysilicon islands with a retaining wall structure on an insulating substrateIEEE Electron Device Letters, 1980
- MOSFETs in laser-recrystallized poly-silicon on quartzIEEE Electron Device Letters, 1980
- Crystal structure and thermal oxidation of laser-recrystallized polycrystalline siliconApplied Physics Letters, 1980
- Thin film MOSFET’s fabricated in laser-annealed polycrystalline siliconApplied Physics Letters, 1979
- Defect Etch for Silicon EvaluationJournal of the Electrochemical Society, 1979
- Diffusion of arsenic along dislocations in epitaxial silicon filmsThin Solid Films, 1975
- Diffusion along Small-Angle Grain Boundaries in SiliconPhysical Review B, 1961
- CXXXVIII. Concentration contours in grain boundary diffusionJournal of Computers in Education, 1954