Preparation and characterization of ZnS thin films produced by metalorganic chemical vapor deposition

Publisher Website
Google Scholar
Abstract
Thin, polycrystalline films of ZnS are grown on single-crystal silicon(100) surfaces by metalorganic chemical vapor deposition. Exposure of the Si substrate to hydrogen sulfide and dimethylzinc at low temperature and low pressure produces films which grow uniformly across a 100-mm diameter. The reactant gases used in this work are not diluted in carrier gases. Reactions are carried out for the temperature range 25–125 °C. ZnS film growth rates for this temperature regime vary from 125 to 2700 Å/min. The ZnS thin films were characterized using scanning electron microscopy, x-ray diffraction, Rutherford backscattering, and x-ray photoelectron spectroscopy.

This publication has 0 references indexed in Scilit: