Excitons at theAbsorption Edge in Zinc Blende-Type Semiconductors
- 1 February 1962
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 8 (3) , 90-91
- https://doi.org/10.1103/physrevlett.8.90
Abstract
DOI: https://doi.org/10.1103/PhysRevLett.8.90Keywords
This publication has 6 references indexed in Scilit:
- Fundamental Reflectivity Spectrum of Semiconductors with Zinc-Blende StructureJournal of Applied Physics, 1961
- Exciton energy levels in germanium and siliconJournal of Physics and Chemistry of Solids, 1960
- On the theory of excitons in solidsJournal of Physics and Chemistry of Solids, 1959
- Experimental investigations of exciton spectra in ionic crystalsPhilosophical Magazine, 1959
- Intensity of Optical Absorption by ExcitonsPhysical Review B, 1957
- Effective mass approximation for excitonsJournal of Physics and Chemistry of Solids, 1956