Low-noise high-power heterojunction bipolar transistors for mixed-mode applications
Open Access
- 19 November 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 1129-1132 vol.3
- https://doi.org/10.1109/mwsym.1995.406170
Abstract
A novel AlGaAs-GaAs heterojunction bipolar transistor (HBT), which provides state-of-the-art noise and record power density through X-band, was developed. This performance is due to advanced design and fabrication techniques. This HBT is readily transferable to mixed-mode applications, such as portable telephones and radar transmit/receive modules.<>Keywords
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