Inelastic electron-electron scattering times in silicon inversion layers
- 1 January 1982
- journal article
- Published by Elsevier in Surface Science
- Vol. 113 (1-3) , 523-526
- https://doi.org/10.1016/0039-6028(82)90643-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Magnetoconductance and weak localization in silicon inversion layersPhysical Review B, 1981
- Magnetoresistance and Hall effect in a disordered two-dimensional electron gasPhysical Review B, 1980
- Negative Magnetoresistance in Silicon (100) MOS Inversion LayersJournal of the Physics Society Japan, 1980
- Spin-Orbit Interaction and Magnetoresistance in the Two Dimensional Random SystemProgress of Theoretical Physics, 1980
- Observation of Higher Sub-band in-Type (100) Si Inversion LayersPhysical Review Letters, 1975
- Negative Field-Effect Mobility on (100) Si SurfacesPhysical Review Letters, 1966