Quantum and temperature effects on capacitance in degenerate P-N junctions
- 31 August 1970
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 13 (8) , 1175-1188
- https://doi.org/10.1016/0038-1101(70)90128-0
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- A continuity equation for the occupation factor of energy statesIEEE Transactions on Electron Devices, 1969
- The capacitance of p-n junctionsSolid-State Electronics, 1967
- Junction Potential Studies in Tunnel DiodesPhysical Review B, 1963
- Degenerate Germanium. I. Tunnel, Excess, and Thermal Current in Tunnel DiodesPhysical Review B, 1962
- Internal Field Emission at Narrow Silicon and GermaniumJunctionsPhysical Review B, 1960
- Fine Structure in the Absorption-Edge Spectrum of GePhysical Review B, 1957
- Energy Levels of a Disordered AlloyPhysical Review B, 1956
- Vereinfachte und erweiterte Theorie der Randschicht-gleichrichterThe European Physical Journal A, 1942
- Zur Halbleitertheorie der Sperrschicht- und SpitzengleichrichterThe European Physical Journal A, 1939