Lattice defects in silicon doped by neutron transmutation
- 1 November 1979
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 50 (11) , 6838-6844
- https://doi.org/10.1063/1.325883
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Compensation of residual boron impurities in extrinsic indium-doped silicon by neutron transmutation of siliconJournal of Applied Physics, 1978
- The distribution of phosphorus and gold in neutron irradiated siliconJournal de Physique Lettres, 1978
- Rapid Determination of the Distribution of 31P in Neutron‐Irradiated SiliconJournal of the Electrochemical Society, 1977
- High-voltage thyristors and diodes made of neutron-irradiated siliconIEEE Transactions on Electron Devices, 1976
- Preparation and application of neutron transmutation doped silicon for power device researchIEEE Transactions on Electron Devices, 1976
- Doping of Silicon by Neutron IrradiationJournal of the Electrochemical Society, 1975
- Breakdown behavior of rectifiers and thyristors made from striation-free siliconIEEE Transactions on Electron Devices, 1974
- Observation of X-Ray Diffuse Scattering from Neutron-Irradiated SiliconJournal of Applied Physics, 1971
- Evidence for Damage Regions in Si, GaAs, and InSb Semiconductors Bombarded with High-Energy NeutronsJournal of Applied Physics, 1967
- Preparation of Uniform Resistivity n-Type Silicon by Nuclear TransmutationJournal of the Electrochemical Society, 1961