A comparison of deposition rates and temperature measurements for dc and rf diode sputtering
- 15 June 1991
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 69 (12) , 8411-8413
- https://doi.org/10.1063/1.347408
Abstract
A comparison between the deposition rates from a copper target in a diode sputtering system using either rf (13.56 MHz) or dc power shows that the deposition rates are the same for equal powers. In situ measurements of the temperature difference, ΔT, between the inlet and outlet target cooling water support this observation. These results contrast with those of magnetron sputtering, where the deposition rate is substantially different for rf and dc power sources.This publication has 4 references indexed in Scilit:
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