Pulsed electron beam annealing of sputtered amorphous Si:H films
- 31 March 1981
- journal article
- Published by Elsevier in Materials Research Bulletin
- Vol. 16 (3) , 347-352
- https://doi.org/10.1016/0025-5408(81)90052-0
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
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- Silicon epitaxy by pulsed laser annealing of evaporated amorphous filmsPhysics Letters A, 1978
- Hydrogen implantation in silicon between 1.5 and 60 kevRadiation Effects, 1976
- A NEW utilization of11B ion beams: Hydrogen analysis by1H11B,α)α α nuclear reactionRadiation Effects, 1974