Characterization of Diamond Particles and Films Formed by Plasma-Assisted Chemical Vapour Deposition Using High-Voltage Electron Microscopy

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Abstract
The internal and interfacial structures of diamond particles and films on Si substrates formed by plasma-assisted chemical vapour deposition have been investigated by high-voltage transmission electron microscopy. The feature of line defects–micro-twin lamellae or stacking faults–in a diamond particle indicates the concentric crystal growth originated from one nucleus. The particles are observed to be in direct contact with the Si substrate around the nucleation site within the resolution limit. The particles are stacked up to form a diamond film.