An exclusive-nor based on resonant interband tunneling FET's
- 1 March 1996
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 17 (3) , 94-96
- https://doi.org/10.1109/55.485178
Abstract
We have proposed and demonstrated an XNOR device based on the negative differential resistance in a resonant interband tunneling diode and the current control capabilities of field effect transistors. DC and timing measurements have confirmed the operations of the device. Simulations and discussions will be presented.Keywords
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