Dependence of the Phonoionization of A+-States in Si on Uniaxial Pressure

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Abstract
By the new technique of phonon induced conductance we have investigated the dependence on pressure of the phonoionization response of shallow A+ - states in Si with superconducting Al-junctions as monochromatic phonon generators. In the case of B+ and Al+ we obtain a much more complicated behaviour than previously found for B+ with FIR-photoconductivity which may be connected with differences in coupling for short wavelength phonons. In the case of in+ on the other hand a shift to lower energies is observed for uniaxial pressure in [100]-direction whereas for pressure in [111]-direction only the signal intensity varies but not the position of the threshold.

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