Lifetimes, ionization energies, and discussion of the emission lines in the 1.5040–1.5110-eV range in GaAs
- 1 October 1986
- journal article
- conference paper
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 60 (7) , 2511-2516
- https://doi.org/10.1063/1.337113
Abstract
We have calculated the recombination lifetimes for donor‐acceptor (D‐A) pairs having separations of 50–70 Å and find very good agreement with measured lifetimes. We have also measured the ionization energies of the transitions in the same spectral region using the temperature dependence of line intensity. The estimated ionization energies of D‐A pairs in this spectral region agree very well with the measured ionization energies. A model has been presented for the g lines, which accounts for the origin of the g lines in both GaAs and InP.This publication has 21 references indexed in Scilit:
- Nature of the 1.5040–1.5110-eV emission band in GaAsJournal of Applied Physics, 1985
- Strongly polarized bound exciton luminescence from GaAs grown by molecular beam epitaxyApplied Physics Letters, 1985
- Observation of discrete donor-acceptor pair spectra in MBE grown GaAsSolid State Communications, 1984
- A model for some defect-related bound exciton lines in the photoluminescence spectrum of GaAs layers grown by molecular beam epitaxyJournal of Physics C: Solid State Physics, 1984
- New photoluminescence lines in GaAs layers grown by metalorganic vapor phase epitaxyJournal of Applied Physics, 1983
- The occurrence of sharp exciton-like features in low temperature photoluminescence spectra from MBE grown GaAsSolid State Communications, 1982
- Impurity and defect levels in beryllium-doped GaAs grown by molecular beam epitaxyJournal of Applied Physics, 1982
- Low temperature photoluminescence of lightly Si-doped and undoped MBE GaAsJournal of Electronic Materials, 1982
- The effect of As2 and As4 molecular beam species on photoluminescence of molecular beam epitaxially grown GaAsApplied Physics Letters, 1980
- Stress Effects on Excitons Bound to Axially Symmetric Defects in SemiconductorsPhysical Review B, 1970