Stress map for ion irradiation: Depth-resolved dynamic competition between radiation-induced viscoelastic phenomena in SiO2
- 19 July 2004
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 85 (3) , 389-391
- https://doi.org/10.1063/1.1773927
Abstract
The dynamic competition between structural transformation, Newtonian viscous flow, and anisotropic strain generation during ion irradiation of Si O 2 , leads to strongly depth-dependent evolution of the mechanical stress, ranging between compressive and tensile. From independent in situ stress measurements during irradiation, generic expressions are derived of the nuclear stopping dependence of both the structural transformation rate and the radiation-induced viscosity. Using these data we introduce and demonstrate the concept of a “stress map” that predicts the depth-resolved saturation stress in Si O 2 for any irradiation up to several MeV.Keywords
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