Trends in the open circuit voltage of semiconductor/liquid interfaces: studies of n-aluminum gallium arsenide/acetonitrile-ferrocene+/0 and n-aluminum gallium arsenide/potassium hydroxide-selenide-/2- (aq) junctions
- 1 February 1991
- journal article
- research article
- Published by American Chemical Society (ACS) in The Journal of Physical Chemistry
- Vol. 95 (3) , 1373-1380
- https://doi.org/10.1021/j100156a063
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Erratum: Correlations between the interfacial chemistry and current-voltage behavior of n-GaAs/liquid junctions [Appl. Phys. Lett. 57, 1242 (1990)]Applied Physics Letters, 1990
- Studies of the gallium arsenide/potassium hydroxide-selenium ion (Se22-)/selenide semiconductor/liquid junctionThe Journal of Physical Chemistry, 1989
- Kinetic studies of carrier transport and recombination at the n-silicon methanol interfaceJournal of the American Chemical Society, 1986
- A Quantitative Investigation of the Open‐Circuit Photovoltage at the Semiconductor/Liquid InterfaceJournal of the Electrochemical Society, 1984