Origin of Surface Defects on Molecular Beam Epitaxially Grown GaAs
- 1 August 1984
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 23 (8A) , L524
- https://doi.org/10.1143/jjap.23.l524
Abstract
A systematic study to eliminate the oval defect commonly observed in MBE grown GaAs layer is achieved, and the defect formation mechanisms are presented. A dramatic reduction (3/cm2) of the oval defect is successfully made by reducing the growth rate to 0.4 µm/h at a growth temperature of 650°C. The Ga droplets produced in a Ga crucible are the most probable cause of the defect formed when the droplets adhere to a substrate surface. The dissociation of gallium oxides (Ga2O3, Ga2O) and thermally agitated gallium might be guilty of the droplet formation.Keywords
This publication has 3 references indexed in Scilit:
- An investigation of GaAs films grown by MBE at low substrate temperatures and growth ratesJournal of Vacuum Science & Technology B, 1983
- Source and elimination of oval defects on GaAs films grown by molecular beam epitaxyApplied Physics Letters, 1981
- On the origin and elimination of macroscopic defects in MBE filmsJournal of Crystal Growth, 1981