MMIC power amplifier yield enhancement with wafer level RF power screening

13 January 2003

proceedings article
Published by Institute of Electrical and Electronics Engineers (IEEE)

https://doi.org/10.1109/gaas.1989.69347

Abstract

A simple wafer-level RF power test methodology is presented that is helpful in the characterization of in-process wafers for RF output power density and drain efficiency. The test is particularly useful in screening anomalous time-dependent defects which are transparent to normal DC tests. In addition, it allows direct measurement of the impact on power density of a critical process step, such as silicon nitride deposition, as well as the removal from process of all out-of-spec wafers.

Keywords

MMICS
POWER AMPLIFIERS
RADIOFREQUENCY AMPLIFIERS
RADIO FREQUENCY
FETS
POWER MEASUREMENT
POWER GENERATION
SYSTEM TESTING
IMPEDANCE MATCHING
FINGERS

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