The growth of CdS, CdSe and CdSSe alloys by MOCVD using dimethylcadmium dioxan adducts
- 31 January 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 94 (1) , 97-101
- https://doi.org/10.1016/0022-0248(89)90607-6
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Growth and assessment of CdS and CdSe layers produced on GaAs by metalorganic chemical vapour depositionJournal of Crystal Growth, 1988
- Single crystal growth by MOCVD of zinc-based chalcogenides using new group II adduct sourcesJournal of Crystal Growth, 1988
- MOCVD growth of ZnSe films using diethylselenideJournal of Crystal Growth, 1984
- The organometallic chemical vapour deposition of ZnS and ZnSe at atmospheric pressureJournal of Crystal Growth, 1982
- Growth and properties of CdS epitaxial layers by the close-spaced techniqueJournal of Applied Physics, 1974
- The epitaxial growth of cadmium sulphide on gallium arsenide substratesJournal of Crystal Growth, 1970
- Über Koordinationsverbindungen des Cadmiumdimethyls mit Äthern und tertiären AminenZeitschrift für anorganische und allgemeine Chemie, 1964