The Role of Implant Temperature in the Formation of Thin Buried Oxide Layers
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- High quality Si-on-SiO2 films by large dose oxygen implantation and lamp annealingApplied Physics Letters, 1986
- Silicon on Insulator Formed By O+ OR N+ Ion ImplantationMRS Proceedings, 1985