Direct three-dimensional patterning using nanoimprint lithography
- 21 May 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 78 (21) , 3322-3324
- https://doi.org/10.1063/1.1375006
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Photonic band-gap waveguide microcavities: Monorails and air bridgesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1999
- “Safe” solvent resist process for sub-quarter micron T-gatesJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Novel electron beam lithography technique for submicron T-gate fabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1997
- Imprint lithography with sub-10 nm feature size and high throughputMicroelectronic Engineering, 1997
- Reactive ion etch-induced effects on 0.2 μm T-gate In0.52Al0.48As/In0.53Ga0.47As/InP high electron mobility transistorsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- 0.1 μm AlGaAs/InGaAs high electron mobility transistor fabrication by the new method of thinned resist pattern reversed by metalJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1996
- Imprint Lithography with 25-Nanometer ResolutionScience, 1996
- Four-layer resist process for asymmetric gate recessMicroelectronic Engineering, 1996
- Novel high-yield trilayer resist process for 0.1 μm T-gate fabricationJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1995
- The application of reactive ion etching in producing free-standing microstructures and its effects on low-temperature electrical transportJournal of Vacuum Science & Technology B, 1989