CW operation of GaInAsP buried ridge structure laser at 1.5 μm grown by LP-MOCVD
- 11 October 1984
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 20 (21) , 850-851
- https://doi.org/10.1049/el:19840577
Abstract
A GaInAsP buried ridge structure laser (BRSL) emitting at 1.5 μm and fabricated on material grown entirely by LP-MOCVD is described for the first time in the letter. Threshold currents of 40 mA DC and an output power up to 15 mW have been obtained at room temperature. CW operation up to 60°C has been achieved.Keywords
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