Epitaxial La0.67Sr0.33MnO3 magnetic tunnel junctions
- 15 April 1997
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 81 (8) , 5509-5511
- https://doi.org/10.1063/1.364585
Abstract
We report the observation of a large magnetoresistance (83%) at low magnetic fields of tens of Oe at 4.2 K in the epitaxial trilayer junction structure, . The spin-polarization parameter of the manganite has been determined from the magnetoresistance value. The switching fields of the two magnetic layers were designed by using the magnetic shape anisotropy. By limiting the sweeping field in a low field range (∼100 Oe), we have achieved bistable resistive states at zero field, which is of potential interest for magnetoelectronic applications.
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