An implanted-emitter 4H-SiC bipolar transistor with high current gain
- 1 March 2001
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 22 (3) , 119-120
- https://doi.org/10.1109/55.910614
Abstract
An epi-base, implanted-emitter, npn bipolar transistor which showed a maximum common emitter current gain (/spl beta/) of /spl sim/40, the highest current gain reported for BJT in any polytype of SiC has been experimentally demonstrated in 4H-SiC. The forward drop was /spl sim/1 V at forward current density of 50 A/cm/sup 2/. The current gain decreases hence specific on-resistance increases with increasing temperature. The negative temperature coefficient of /spl beta/ makes the device attractive for paralleling and for preventing thermal runaways.Keywords
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