InGaN/GaN multi-quantum well distributed Bragg reflector laser diode
- 14 March 2000
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 76 (12) , 1489-1491
- https://doi.org/10.1063/1.126072
Abstract
An electrically injected InGaN/GaN-based distributed Bragg reflector (DBR) laser was demonstrated. Surface grating was formed on both sides of ridge waveguide by chemically assisted ion beam etching technique. The observed threshold current was 375 mA with threshold voltage of 15.1 V for devices. The emission of the DBR laser occurred in a single longitudinal mode at a wavelength of 401.3 nm. The ratio of sidemode suppression was found to be more than 13 dB until a current injection of 1 A.
Keywords
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