Radiation stability of AIII2BVI3semiconductors
- 1 January 1976
- journal article
- research article
- Published by Taylor & Francis in Radiation Effects
- Vol. 29 (1) , 1-6
- https://doi.org/10.1080/00337577608233475
Abstract
The influence of large doses of fast neutron irradiation on some : hysical properties of a number of semiconductor materials has been investigated. It is shown that the physical parameters of In2Te3 and Ga2Te3 semiconducting crystals having loose crystal structure, unlike other semiconductors, possess anomalously high radiation stability. The mechanism of this phenomenon, based on an assumption about large instability zones in the interstitial-vacancy pairs in crystals of In2Te3-type, is discussed.Keywords
This publication has 3 references indexed in Scilit:
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- Dynamics of Radiation DamagePhysical Review B, 1960
- Electron-Bombardment Damage in SiliconPhysical Review B, 1958