Time-of-Flight Mobility and Trapping Results for ZnSe

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Abstract
Time‐of‐flight mobility and trapping results for zinc selenide are presented. The data were obtained at room temperature for electric fields in the range 3×104−8×105 V/cm. A relatively constant hole mobility (∼50 cm2/V sec) was found for the entire range of investigated fields. The electron mobility was approximately constant (∼400 cm2/V sec) up to E≃3×105 V/cm, above which the drift velocity remained constant. No obvious negative differential mobility was observed, even though the Gunn effect has been reported for the field range investigated. Trapping and detrapping times in the vicinity of 1 nsec are reported for both holes and electrons. The field dependence of the electron‐trapping times is unusual and remains unexplained.