The Schottky barriers produced by polymeric sulfur nitride on compound semiconductors
- 1 September 1977
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9) , 3838-3842
- https://doi.org/10.1063/1.324252
Abstract
Schottky barriers produced by polymeric sulfur nitride, (SN)x, on nine common III-V and II-VI compound semiconductors are compared to barriers formed by Au. The conductor (SN)x produces significantly higher barriers to n-type semiconductors and lower barriers to p-type semiconductors than Au, the most electronegative elemental metal. The barrier height improvement, defined as ‖φ (SN)x−φ (Au) ‖, is smaller on covalent semiconductors than on ionic semiconductors; (SN)x barriers follow the ionic-covalent transition. Details of (SN)x film deposition, sample preparation, and barrier height measurements are described.This publication has 14 references indexed in Scilit:
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