Geometric effects on the gate-controlled capacitor
- 1 September 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (9) , 1843-1846
- https://doi.org/10.1109/t-ed.1980.20115
Abstract
The effect of p-n junction geometry on the capacitance-voltage (C-V) and conductance-voltage (G-V) characteristics of a gate-controlled Capacitor (GCC) is discussed. Three p-n junction geometries were studied; one was a circular structure and the remaining two were cross structures. It is concluded that the effective transit distances are decreased as the geometries of the junction become more complex.Keywords
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