Binding energy of an electron to a three-defect-complex in CdTe
- 1 April 1975
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 16 (7) , 913-916
- https://doi.org/10.1016/0038-1098(75)90892-3
Abstract
No abstract availableKeywords
This publication has 4 references indexed in Scilit:
- Characterization of the Transport Properties of Halogen-Doped CdTe Used for Gamma-Ray DetectorsIEEE Transactions on Nuclear Science, 1974
- Self-compensation in CdTeJournal of Physics and Chemistry of Solids, 1974
- An Analysis of the Temperature Distribution During Crystal Growth by THMJournal of the Electrochemical Society, 1974
- Cadmium telluride, grown from tellurium solution, as a material for nuclear radiation detectorsPhysica Status Solidi (a), 1970