Relative Integrated Intensity of the X-Ray Diffraction and Effective Charge in GaAs1-xPx Compounds
- 1 July 1971
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 10 (7)
- https://doi.org/10.1143/jjap.10.835
Abstract
An X-ray study with CuKα is carried out on fine-powder samples of GaP, GaAs and their quasi-binary compounds. Integrated intensities of 14 lines from the (111) to the (533) are measured on a relative scale. The temperature factors of individual atoms are determined by the condition of minimizing the R-factor. The assumption that the atomic scattering factor of the group V atom in the quasi-binary compounds is represented by a linear combination of constituent group V atoms is shown to be valid from the experimental analysis. The variation of the effective charge in the GaAs-GaP quasi-binary system is estimated in three ways. The fact that negative charge is transferred from the group III atom to the group V atom is concluded in GaP, GaAs and their quasi-binary compounds.Keywords
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