Depth Profiles of the Lattice Disorder Resulting from Ion Bombardment of Silicon Single Crystals

Publisher Website
Google Scholar
Abstract
The depth profile of the lattice disorder resulting from the ion bombardment of single crystals is of interest in many applications. It has been shown that the channeling effect is sensitive to such lattice damage and has been used in extracting the total damage caused by short‐range ion bombardment. This paper describes an extension of the channeling technique which yields not only the amount of damage but certain parameters of the depth distribution of the damage. This method is applied to the case of 200–500 keV light ion bombardment in silicon. The results of the measurements and analysis indicate (1) Annealing at room temperature is an important process in determining the extent and characteristics of the damage. (2) The peak of the damage distribution is 10%–20% shallower than the expected range of the ion. (3) The widths of the damage distribution are significantly broader than the expected width of the ion distribution.