Positive Photoresist Development: A Multiple State Percolation Model

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Abstract
A 3-dimensional multiple state molecular-scale model is described for simulating the exposure and development of positive diazonaphthoquinone/novolac-type photoresist. Resist composition and properties of the individual components are specified; development proceeds through percolational approach. A second macro-scale simulator then uses the dose/response information generated by the molecular scale model to simulate exposure and development of resist profiles in three dimensions. Simulation results are presented to describe the effects of varying the PAC/resin ratio, resin dissolution rate, and the number of photoactive groups per molecule in terms of lithographically relevant properties such as contrast, energy reaction order and resist profile appearance.

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