High-speed GaInAsSb/GaSb PIN photodetectors for wavelengths to 2.3 μm
- 30 January 1986
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 22 (3) , 137-138
- https://doi.org/10.1049/el:19860096
Abstract
Front-illuminated diffused-junction PIN mesa photodiodes for use at wavelengths up to 23 pm are described. The impulse response is 160 ps FWHM at −10 V bias, and the external quantum efficiency is 56%. The detector responds to pseudorandom modulation at bit rates up to 2 Gbit/s.Keywords
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