An improved method to determine MOSFET channel length

1 December 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 3 (12) , 360-362
https://doi.org/10.1109/EDL.1982.25600

Abstract

An accurate and simple method to determine channel length and parasitic drain/source series resistance is presented. This method is based on measured data of two identical devices with different channel lengths. Because of its simplicity, the technique is suitable for use in automatic parameter testing systems.

Keywords

MOSFET CIRCUITS
LENGTH MEASUREMENT
ELECTRICAL RESISTANCE MEASUREMENT
SURFACE RESISTANCE
CAPACITANCE
MOS DEVICES
INTRUSION DETECTION
CURRENT MEASUREMENT
VELOCITY MEASUREMENT
THRESHOLD VOLTAGE

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