Abstract
This work addresses spin-dependent magnetotransport in a band-gap-matched ZnSe/Zn1xMnxSe heterostructure. In an external magnetic field the paramagnetic layer behaves as a potential well for spin-down electrons and a potential barrier for spin-up ones. My current-density calculation shows a strong suppression of the spin-up component of the current density for increasing magnetic fields; the total current density is dominated by the spin-down component for B>2T. This result gives rise to the possibility of devising spin filters relevant for spin-dependent optoelectronics.