Low resistance alloyed ohmic contacts to Al 0.48 In 0.52 As/ n + -Ga 0.47 In 0.53 As

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Abstract
A low ohmic contact resistance metallurgy and associated alloy cycles have been developed for applications to Al0.48In0.52As/Ga0.47In0.53As MODFETs (HEMTs). The metallurgy involves sequentially evaporated Ni/Ge/Au/Ag/Au layers followed by transient thermal alloy cycles. This resulted in low transfer resistances ∼0.06 Ωmm to the underlying GalnAs layer for alloying temperatures to ∼480°C.