Anomalous Distribution of In Atoms in GaAs during Migration-Enhanced Epitaxy

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Abstract
An InAs monolayer is grown between GaAs layers using migration-enhanced epitaxy. The surface chemical characteristic during growth is investigated by reflection high energy electron diffraction. When the substrate temperature is about 500°C, the oscillation amplitude of reflected electron beam after growth of one monolayer of InAs vanishes during the growth of GaAs over more than 20 atomic layers. High-resolution secondary-ion mass spectroscopic analysis of the fabricated structures indicates that the anomalous distribution of In atoms with a gradual slope towards the growth direction occurs when the substrate temperature is 500°C. The experimental results are explained in terms of the replacement of In atoms in the InAs monolayer by the newly deposited Ga atoms.

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