Optical absorption coefficient of (Al0.42Ga0.58)As
- 1 September 1977
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 48 (9) , 4000
- https://doi.org/10.1063/1.324240
Abstract
The measured room‐temperature absorption coefficient of a high‐purity layer of (Al0.42Ga0.58)As is quite similar to that of pure GaAs with energy displaced by 540 meV. It has a plateau in the high‐absorption region of about 104 cm−1.This publication has 6 references indexed in Scilit:
- Optical absorption and photoluminescence studies of thin GaAs layers in GaAs–AlxGa1−xAs double heterostructuresJournal of Applied Physics, 1974
- Optical waveguides in GaAs–AlGaAs epitaxial layersJournal of Applied Physics, 1973
- Electroreflectance Spectra of AlxGa1−xAs AlloysCanadian Journal of Physics, 1971
- Optical Properties of n-Type GaAs. I. Determination of Hole Diffusion Length from Optical Absorption and Photoluminescence MeasurementsJournal of Applied Physics, 1969
- Absorption edge in degenerate n-type gallium arsenideJournal of Physics and Chemistry of Solids, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962