Channeling study of the formation of arsenic clusters in silicon
- 1 January 1979
- proceedings article
- Published by AIP Publishing in AIP Conference Proceedings
- Vol. 50 (1) , 305-310
- https://doi.org/10.1063/1.31673
Abstract
The formation of As clusters in Si has been studied by measuring the As lattice site location, using helium ion channeling on high dose As implanted Si. The annealing process involves using pulsed laser irradiation to super‐saturate the Si with As, followed by furnace annealing for cluster formation. Displacements of As from the lattice site by ∠0.15 Å have been observed in the thermally‐annealed samples. This displacement is direct evidence of the formation of As clusters.Keywords
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