Aluminum Oxide/Silicon Dioxide, Double-Insulator, MOS Structure
- 1 April 1975
- journal article
- website
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Bell System Technical Journal
- Vol. 54 (4) , 687-719
- https://doi.org/10.1002/j.1538-7305.1975.tb02861.x
Abstract
A double-insulator structure consisting of 500 of vapor-deposited Al2O2 and 1000 of thermally grown SiO2 is used as the gate dielectric in a beam-lead-compatible, p-channel, MOSFET, silicon-integrate...Keywords
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