Power GaAs MESFETs with a Graded Recess Structure

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Abstract
A new recess structure called a graded recess structure was developed to improve the performance of power GaAs MESFETs. The investigation on the light emission from the device confirmed that the anomalous electric field outside the gate region was eliminated by the graded recess structure. Due to the elimination of the anomalous field, the drain and the gate breakdown voltages were improved. The linear gain and the output power of the devices were resultantly improved by 1–2dB, and the output powers of 15 W (4 dB gain) and 4.3 W (3 dB gain) were obtained at 6 and 11 GHz band, respectively.

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