Crystal Growth of InP on a Gd3Ga5O12 Substrate by Organometallic Chemical Vapor Deposition
- 1 January 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (1R)
- https://doi.org/10.1143/jjap.29.53
Abstract
This paper reports the results of crystal growth of InP on a Gd3Ga5O12 (GGG) substrate. Effectiveness of the In-P/GaInAsP superlattice is shown. Substrate orientations of (100) and (111) are compared. By using the GGG(100) substrate and introducing the superlattice, the best result was obtained for growing an InP layer. From X-ray diffraction analysis, it was found that the grown InP layer was preferentially (111) oriented along the film normal. SEM and RHEED observation revealed that the grown layer was composed of polycrystalline grains with random orientation in the film plane.Keywords
This publication has 7 references indexed in Scilit:
- Electron-Beam Exposure(EBE) and Epitaxy of GaAs Films on CaF2/Si StructuresJapanese Journal of Applied Physics, 1988
- First GaInAsP-InP double-heterostructure laser emitting at 1.27 μm on a silicon substrateApplied Physics Letters, 1988
- Characterization of InP/GaAs epilayers grown on Si substrates by low-pressure organometallic vapor phase epitaxyApplied Physics Letters, 1988
- Heteroepitaxial growth of InP on garnetJournal of Crystal Growth, 1988
- High-quality GaInAsP/InP heterostructures grown by low-pressure metalorganic chemical vapor deposition on silicon substratesApplied Physics Letters, 1988
- Hetero-epitaxial growth of GaAs on garnetsJournal of Crystal Growth, 1987
- Growth of GaInAs-InP multiquantum wells on garnet (GGG=Gd3Ga5O12) substrate by metalorganic chemical vapor depositionJournal of Applied Physics, 1986